sot-23 plastic-encapsulate mosfets CJ3402 n-channel mosfet description the CJ3402 uses advanced trench tec hnology to provide excellent r ds(on) , low gate charge and operation with gate voltage as low as 2.5v. this device is suitable for use as a load switch or in pwm application. features z lead free product is acquired z surface mount package application z load switch and in pwm applications marking: r2 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current i d 4 a pulsed drain current (note 1) i dm 15 a power dissipation p d 0.35 w thermal resistance from junction to ambient (note 2) r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -23 1. gate 2. source 3. drain 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 0.6 1 1.4 v v gs =10v, i d =4a 45 55 m ? v gs =4.5v, i d =3a 55 70 m ? drain-source on-resistance (note 3) r ds(on) v gs =2.5v, i d =2a 83 110 m ? forward transconductance (note 3) g fs v ds =15v, i d =4a 8 s diode forward voltage (note 3) v sd i s =1a, v gs = 0v 0.8 1 v dynamic characteristics (note 4) input capacitance c iss 390 pf output capacitance c oss 54.5 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 41 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 3 ? switching characteristics (note 4) turn-on delay time t d(on) 3.3 ns turn-on rise time t r 1 ns turn-off delay time t d(off) 21.7 ns turn-off fall time t f v gs =10v,v ds =15v, r l =3.75 ? ,r gen =6 ? 2.1 ns total gate charge q g 4.34 nc gate-source charge q gs 0.6 nc gate-drain charge q gd v ds =15v,v gs =4.5v,i d =4a 1.38 nc body diode reverse recovery time t . 1.2 ns body diode reverse recovery charge q rr i f =4a,di/dt=100a/s 6.3 nc notes : 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 80s, duty cycle 0.5%. 4. guaranteed by design, not subject to producting. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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